Objective Questions on Transistor

Posted by

Objective Questions on Transistor

Objective Questions on Transistor, Multiple Choice Questions on Transistor, Transistor MCQ, GATE Questions on Transistor, Bipolar Junction Transistor MCQ, Multiple Choice Questions on Bipolar Junction Transistor, Engineering MCQ, Electronics Devices MCQ, Electronics Circuits MCQ, Objective Questions on Transistor

Multiple-Choice Questions

Q.1. A transistor has ……..

  • one pn junction
  • two pn junctions
  • three pn junctions
  • four pn junctions

Answer: two pn junctions

Q.2. The number of depletion layers in a transistor is ……..

  • four
  • three
  • one
  • two

Answer: two

Q.3. The base of a transistor is ……. doped.

  • heavily
  • moderately
  • lightly
  • none of the above

Answer: lightly

Q.4. The element that has the biggest size in a transistor is ……..

  • collector
  • base
  • emitter
  • collector-base junction

Answer: collector

Q.5. In a pnp transistor, the current carriers are ……..

  • acceptor ions
  • donor ions
  • free electrons
  • holes

Answer: holes

Q.6. The collector of a transistor is …….. doped.

  • heavily
  • moderately
  • lightly
  • none of the above

Answer: moderately

Q.7. A transistor is a ……… operated device.

  • current
  • voltage
  • both voltage and current
  • none of the above

Answer: current

Q.8. In an npn transistor, ……. are the minority carriers.

  • free electrons
  • holes
  • donor ions
  • acceptor ions

Answer: holes

Q.9. The emitter of a transistor is …….. doped.

  • lightly
  • heavily
  • moderately
  • none of the above

Answer: heavily

Q.10. In a transistor, the base current is about ……..of emitter current.

  • 25%
  • 20%
  • 35%
  • 5%

Answer: 5%

Q.11. At the base-emitter junction of a transistor, one finds ……..

  • reverse bias
  • a wide depletion layer
  • low resistance
  • none of the above

Answer: low resistance

Q.12. The input impedance of a transistor is ……

  • high
  • low
  • very high
  • almost zero

Answer: low

Q.13. Most of the majority carriers from the emitter ………

  • recombine in the base
  • recombine in the emitter
  • pass through the base region to the collector
  • none of the above

Answer: pass through the base region to the collector

Q.14. The current IB is ……..

  • electron current
  • hole current
  • donor ion current
  • acceptor ion current

Answer: electron current

Q.15. In a transistor, ……..

  • IC = IE + IB
  • IB = IC + IE
  • IE = IC IB
  • IE = IC + IB

Answer: IE = IC + IB

Q.16. The value of α of a transistor is ……..

  • more than 1
  • less than 1
  • 1
  • none of the above

Answer: less than 1

Q.17. IC = α IE + ………

  • IB
  • ICEO
  • ICBO
  • β IB

Answer: ICBO

Q.18. The output impedance of a transistor is ……..

  • high
  • zero
  • low
  • very low

Answer: high

Q.19. In a transistor, IC = 100 mA and IE = 100.5 mA. The value of β is ……..

  • 100
  • 50
  • about 1
  • 200

Answer: 200

Q.20. In a transistor if β = 100 and collector current is 10 mA, then IE is ……..

  • 100 mA
  • 100.1 mA
  • 110 mA
  • none of the above

Answer: 100.1 mA

Q.21. The value of β for a transistor is generally ……..

  • 1
  • less than 1
  • between 20 and 500
  • above 500

Answer: between 20 and 500

Q.22. The most commonly used transistor arrangement is …….. arrangement.

  • common emitter
  • common base
  • common collector
  • none of the above

Answer: common emitter

Q.23. The input impedance of a transistor connected in ………. arrangement is the highest.

  • common emitter
  • common collector
  • common base
  • none of the above

Answer: common collector

Q.24. The output impedance of a transistor connected in ……… arrangement is the highest.

  • common emitter
  • common collector
  • common base
  • none of the above

Answer: common base

Q.25. The phase difference between the input and output voltages in a common base arrangement is ………

  • 180º
  • 90º
  • 270º

Answer:

Q.26. The power gain of a transistor connected in …….. arrangement is the highest.

  • common emitter
  • common base
  • common collector
  • none of the above

Answer: common emitter

Q.27. The phase difference between the input and output voltages of a transistor connected in

common emitter arrangement is ……..

  • 180º
  • 90º
  • 270º

Answer: 180º

Q.28. The voltage gain of a transistor connected in …….. arrangement is the highest.

  • common base
  • common collector
  • common emitter
  • none of the above

Answer: common emitter

Q.29. As the temperature of a transistor goes up, the base-emitter resistance ……..

  • decreases
  • increases
  • remains the same
  • none of the above

Answer: decreases

Q.30. The voltage gain of a transistor connected in common collector arrangement is …….

  • equal to 1
  • more than 10
  • more than 100
  • less than 1

Answer: less than 1

Q.31. The phase difference between the input and output voltages of a transistor connected in

common collector arrangement is ……..

  • 180º
  • 90º
  • 270º

Answer:

Q.32. BC 147 transistor indicates that it is made of ……..

  • germanium
  • silicon
  • carbon
  • none of the above

Answer: silicon

Q.33. A transistor is connected in CB mode. If it is now connected in CE mode with same bias

voltages, the values of IE, IB and IC will ….

  • remain the same
  • increase
  • decrease
  • none of the above

Answer: remain the same

Q.34. If the value of α is 0.9, then value of β is ……..

  • 9
  • 0.9
  • 900
  • 90

Answer: 90

Q.35. In a transistor, signal is transferred from a …….. circuit.

  • high resistance to low resistance
  • low resistance to high resistance
  • high resistance to high resistance
  • low resistance to low resistance

Answer: low resistance to high resistance

Q.36. The arrow in the symbol of a transistor indicates the direction of ………

  • electron current in the emitter
  • electron current in the collector
  • hole current in the emitter
  • donor ion current

Answer: hole current in the emitter

Q.37. The leakage current in CE arrangement is ……. that in CB arrangement.

  • more than
  • less than
  • the same as
  • none of the above

Answer: more than

Q.38. A heat sink is generally used with a transistor to ……..

  • increase the forward current
  • decrease the forward current
  • compensate for excessive doping
  • prevent excessive temperature rise

Answer: prevent excessive temperature rise

Q.39. The most commonly used semiconductor in the manufacture of a transistor is ……..

  • germanium
  • silicon
  • carbon
  • none of the above

Answer: silicon

Q.40. The collector-base junction in a transistor has ……..

  • forward bias at all times
  • reverse bias at all times
  • low resistance
  • none of the above

Answer: reverse bias at all times

Semiconductor Diode MCQ

Field-Effect Transistors (FET) MCQ (Part-1)

Leave a Reply

Your email address will not be published. Required fields are marked *