Objective Questions on Transistor Biasing

Posted by

Objective Questions on Transistor Biasing

Objective Questions on Transistor Biasing, Transistor Biasing MCQ, Multiple Choice Questions on Transistor Biasing, MCQ on Transistor Biasing, Multiple Choice Questions and Answers on Transistor Biasing, Transistor Bias Configuration Objective Questions and Answers, GATE Questions and Answer, Engineering MCQ, Electronics Device MCQ, Objective Questions on Transistor Biasing

Multiple Choice Questions

Q.1. Transistor biasing represents …….. conditions.

  • a.c.
  • d.c.
  • both a.c. and d.c.
  • none of the above

Answer: d.c.

Q.2. Transistor biasing is done to keep …….. in the circuit.

  • proper direct current
  • proper alternating current
  • the base current small
  • collector current small

Answer: proper direct current

Q.3. Operating point represents ……. .

  • values of IC and VCE when signal is applied
  • the magnitude of signal
  • zero signal values of IC and VCE
  • none of the above

Answer: zero signal values of IC and VCE

Q.4. If biasing is not done in an amplifier circuit, it results in ……..

  • decrease in base current
  • unfaithful amplification
  • excessive collector bias
  • none of the above

Answer: unfaithful amplification

Q.5. Transistor biasing is generally provided by a ……..

  • biasing circuit
  • bias battery
  • diode
  • none of the above

Answer: biasing circuit

Q.6. For faithful amplification by a transistor circuit, the value of VBE should ………. for a silicon transistor.

  • be zero
  • be 0.01 V
  • not fall below 0.7 V
  • be between 0 V and 0.1 V

Answer: not fall below 0.7 V

Q.7. For proper operation of the transistor, its collector should have ………

  • proper forward bias
  • proper reverse bias
  • very small size
  • none of the above

Answer: proper reverse bias

Q.8. For faithful amplification by a transistor circuit, the value of VCE should …….. for silicon transistor.

  • not fall below 1 V
  • be zero
  • be 0.2 V
  • none of the above

Answer: not fall below 1 V

Q.9. The circuit that provides the best stabilization of operating point is ……….

  • base resistor bias
  • collector feedback bias
  • potential divider bias
  • none of the above

Answer: potential divider bias

Q.10. The point of intersection of d.c. and a.c. load lines represents ………

  • operating point
  • current gain
  • voltage gain
  • none of the above

Answer: operating point

Q.11. An ideal value of stability factor is ……..

  • 100
  • 200
  • more than 200
  • 1

Answer: 1

Q.12. The zero signal IC is generally …… mA in the initial stages of a transistor amplifier.

  • 4
  • 1
  • 3
  • more than 10

Answer: 1

Q.13. If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be atleast equal to ………

  • 6 mA
  • 1.5 mA
  • 3 mA
  • 1 mA

Answer: 3 mA

Q.14. The disadvantage of base resistor method of transistor biasing is that it ……..

  • is complicated
  • is sensitive to changes in β
  • provides high stability
  • none of the above

Answer: is sensitive to changes in β

Q.15. The biasing circuit has a stability factor of 50. If due to temperature change, ICBO changes by 1 μA, then IC will change by ……..

  • 100 μA
  • 25 μA
  • 20 μA
  • 50 μA

Answer: 50 μA

Q.16. For good stabilization in voltage divider bias the current I1 flowing through R1 and R2 should be equal to or greater than ……..

  • 10 IB
  • 3 IB
  • 2 IB
  • 4 IB

Answer: 10 IB

Q.17. The leakage current in a silicon transistor is about ……… the leakage current in a germanium transistor.

  • one hundredth
  • one tenth
  • one thousandth
  • one millionth

Answer: one thousandth

Q.18. The operating point is also called the ……..

  • cut off point
  • quiescent point
  • saturation point
  • none of the above

Answer: quiescent point

Q.19. For proper amplification by a transistor circuit, the operating point should be located at …….. of the d.c. load line.

  • the end point
  • middle
  • the maximum current point
  • none of the above

Answer: middle

Q.20. The operating point …….. on the a.c. load line.

  • also lies
  • does not lie
  • may or may not lie
  • data insufficient

Answer: also lies

Q.21. The disadvantage of voltage divider bias is that it has ……..

  • high stability factor
  • low base current
  • many resistors
  • none of the above

Answer: many resistors

Q.22. Thermal runaway occurs when ……..

  • collector is reverse biased
  • transistor is not biased
  • emitter is forward biased
  • junction capacitance is high

Answer: transistor is not biased

Q.23. The purpose of resistance in the emitter circuit of a transistor amplifier is to ………..

  • limit the maximum emitter current
  • provide base-emitter bias
  • limit the change in emitter current
  • none of the above

Answer: limit the change in emitter current

Q.24. In a transistor amplifier circuit, VCE = VCB + ………..

  • VBE
  • 2 VBE
  • 1.5 VBE
  • none of the above

Answer: VBE

Q.25. The base resistor method is generally used in ………

  • amplifier circuits
  • switching circuits
  • rectifier circuits
  • none of the above

Answer: switching circuits

Q.26. For germanium transistor amplifier, VCE should ……… for faithful amplification.

  • be zero
  • be 0.2 V
  • not fall below 0.7 V
  • none of the above

Answer: not fall below 0.7 V

Q.27. In a base resistor method, if the value of β changes by 50, then collector current will change by a factor of ……..

  • 25
  • 50
  • 100
  • 200

Answer: 50

Q.28. The stability factor of a collector feedback bias circuit is …….. that of base resistor bias.

  • the same as
  • more than
  • less than
  • none of the above

Answer: less than

Q.29. In the design of a biasing circuit, the value of collector load RC is determined by ……..

  • VCE consideration
  • VBE consideration
  • IB consideration
  • none of the above

Answer: VCE consideration

Q.30. If the value of collector current IC increases, then value of VCE ……..

  • remains the same
  • decreases
  • increases
  • none of the above

Answer: decreases

Q.31. If the temperature increases, the value of VBE …….

  • remains the same
  • is increased
  • is decreased
  • none of the above

Answer: is decreased

Q.32. The stabilization of operating point in potential divider method is provided by ……..

  • RE consideration
  • RC consideration
  • VCC consideration
  • none of the above

Answer: RE consideration

Q.33. The value of VBE …………

  • depends upon IC to moderate extent
  • is almost independent of IC
  • is strongly dependent on IC
  • none of the above

Answer: is almost independent of IC

Q.34. When the temperature changes, the operating point is shifted due to ……..

  • change in ICBO
  • change in VCC
  • change in the values of circuit resistances
  • none of the above

Answer: change in ICBO

Q.35. The value of stability factor for a base-resistor bias is ……..

  • RB (β + 1)
  • (β + 1) RC
  • (β + 1)
  • 1 – β

Answer: (β + 1)

Q.36. In a practical biasing circuit, the value of RE is about ……..

  • 10 kΩ
  • 1 MΩ
  • 100 kΩ
  • 800 Ω

Answer: 800 Ω

Q.37. A silicon transistor is biased with base resistor method. If β = 100, VBE = 0.7 V, zero signal collector current IC = 1 mA and VCC = 6 V, what is the value of base resistor RB ?

  • 105 kΩ
  • 530 kΩ
  • 315 kΩ
  • none of the above

Answer: 530 kΩ

Q.38. In voltage divider bias, VCC = 25 V ; R1 = 10 kΩ; R2 = 2.2 kΩ ; RC= 3.6 kΩ and RE = 1 kΩ. What is the emitter voltage ?

  • 6.7 V
  • 5.3 V
  • 4.9 V
  • 3.8 V

Answer: 3.8 V

Q.39. In the above question, what is the collector voltage ?

  • 12.3 V
  • 14.8 V
  • 7.6 V
  • 9.7 V

Answer: 12.3 V

Q.40. In voltage divider bias, operating point is 3 V, 2 mA. If VCC = 9 V, RC = 2.2 kΩ, what is the value of RE ?

  • 2000 Ω
  • 1400 Ω
  • 800 Ω
  • 1600 Ω

Answer: 800 Ω

Semiconductor Diode MCQ

Leave a Reply

Your email address will not be published. Required fields are marked *